JSM6288T three-phase high and low side power MOSFET/IGBT driver chip Review

JSM6288T is a high voltage, high speed power MOSFET and low side driver chip. It uses low•voltage compatible processes to enable and lowside gate drive circuits to be integrated on a single chip. It has independent high side and low side reference output channels. The JSM6288T logic input level is compatible with CMOS or LSTTL logic output levels as low as 3.3V, and the output has large current pulse capability and dead•zone logic to prevent direct pass.

Company Profile: JSMirco-SEMI  is a company specializing in the production of power management chips (AC-DC/DC-DC), MOSFETs series (high, medium and low voltage MOS and COOL MOS), diodes, triodes, thyristors, read-write chips, etc.Company advantages: A high-tech company founded by a team of specially appointed national experts and returnees with doctoral degrees from Europe and the United States. It is one of the companies in the industry that can provide the most comprehensive products and solutions, has a complete independent research and development system and masters a number of domestic leading key core technologies.

JSM6288T




The floating channel of JSM6288T can be used to drive the high side N channel power MOSFET, and the maximum operating voltage of the floating channel can reach 250V. JSM6288T is a TSSOP20 package and can operate in the temperature range of •40℃ to 125℃.

Application:

• Motor control

• Air conditioner/washing machine

• General inverter

• Micro inverter drive

JSM6288T performance parameter introduction

• Floating channel for bootstrap operation

• Maximum operating voltage is +250V

• Compatible with 3.3/5V input logic

• dVs/dt tolerance can reach ±50V/ns

• Vs negative bias capability reaches •9V

• Gate drive voltage range 8V to 20V

• High and low side undervoltage lockout circuit

• High side undervoltage lockout positive threshold 7.1V

• High side undervoltage lockout negative threshold 6.9V

• Low side undervoltage lockout positive threshold 7V

• Low side undervoltage lockout negative threshold 6.6V

• Anti•through dead zone logic

• Dead zone time setting 200ns

• Chip transmission delay characteristics

• Turn on/off transmission delay Ton/Toff =150ns/120ns

• Delay matching time is less than 50ns

• Wide temperature range •40~125C

• Output stage source current/sink current capability 1.5A/1.8A

• Compliant with RoSH standard

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